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FDS6670S
August 2001
FDS6670S
30V N-Channel PowerTrench(R) SyncFET TM
General Description
The FDS6670S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6670S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.
Features
* 13.5 A, 30 V. RDS(ON) = 9 m @ VGS = 10 V RDS(ON) = 12.5 m @ VGS = 4.5 V * * * Includes SyncFET Schottky body diode Low gate charge (24nC typical) High performance trench technology for extremely low RDS(ON) and fast switching * High power and current handling capability
Applications
* DC/DC converter * Motor drives
D D
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
T A =25 oC unless otherwise noted
Parameter
Ratings
30 20
(Note 1a)
Units
V V A W
13.5 50 2.5 1.2 1 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 25
C/W C/W
Package Marking and Ordering Information
Device Marking FDS6670S Device FDS6670S Reel Size 13'' Tape width 12mm Quantity 2500 units
(c)2001 Fairchild Semiconductor Corporation
FDS6670S Rev E (W)
FDS6670S
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR
T A = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 1 mA ID = 1 mA, Referenced to 25C VDS = 24 V, VGS = 20 V, VGS = -20 V, VGS = 0 V VDS = 0 V VDS = 0 V
Min
30
Typ
Max Units
V
Off Characteristics
24 500 100 -100 mV/C A nA nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = 1 mA ID = 1 mA, Referenced to 25C VGS = 10 V, ID = 13.5 A VGS = 4.5 V, ID = 11.2 A VGS=10 V, ID =13.5A, TJ=100C VGS = 10 V, VDS = 10 V, VDS = 5 V ID = 13.5 A
1
2.2 -6.2 7 9.5 9
3
V mV/C
9 12.5 12.5
m
ID(on) gFS
50 45
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 15 V, f = 1.0 MHz
V GS = 0 V,
2674 751 254
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDS = 15 V, VGS = 10 V,
ID = 1 A, RGEN = 6
11 10 44 23
20 20 70 37 34
ns ns ns ns nC nC nC
VDS = 15 V, VGS = 5 V
ID = 13.5 A,
24 7.3 6
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD trr Qrr
Notes: 1. RJA is the sum of the junction-to-case and case -to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50C/W when mounted on a 1 in2 pad of 2 oz copper b) 105C/W when mounted on a .04 in 2 pad of 2 oz copper c) 125C/W when mounted on a minimum pad.
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 3.5 A VGS = 0 V, IS = 7 A IF = 13.5A, diF/dt = 300 A/s
(Note 2) (Note 2)
3.5 0.4 0.5 26.8 47.2 0.7
A V nS nC
(Note 3)
FDS6670S Rev E (W)
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. See "SyncFET Schottky body diode characteristics" below.
FDS6670S Rev E (W)
FDS6670S
Typical Characteristics
50
2.6
VGS = 10V
40 I D, DRAIN CURRENT (A)
6.0V
R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
4.5V 4.0V 3.5V
2.2
VGS = 3.5V
30
1.8
4.0V
1.4
20
4.5V 6.0V
10
3.0V
1
10V
0 0 0.5 1 1.5 2 VD S, DRAIN-SOURCE VOLTAGE (V)
0.6 0 10 20 30 40 50 I D, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.025 RDS(ON) , ON-RESISTANCE (OHM)
R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
1.6 ID = 13.5A VGS = 10V 1.4
ID = 6.8A
0.02
1.2
0.015
1
TA = 125 C
o
0.8
0.01
TA = 25 C
o
0.6 -50 -25 0 25 50
o
75
100
0.005 2 4 6 8 10 V GS , GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
70 60 I D, DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10 I S, REVERSE DRAIN CURRENT (A)
VDS = 5V
T A = -55 C 125 C
o
o
25 C
o
VGS = 0V
1
o
50 40 30 20 10 0 2 2.5 3 3.5 4 4.5 VGS, GATE TO SOURCE VOLTAGE (V)
TA = 125 C
o
25 C
0.1
-55 C
0.01
o
0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS6670S Rev E (W)
FDS6670S
Typical Characteristics
(continued)
10 VGS, GATE-SOURCE VOLTAGE (V) ID =13.5A 8 15V 6 VD S = 5V 10V CAPACITANCE (pF)
3600 3000 C ISS 2400 1800 1200 C OSS 600 CRSS 0 0 5 10 15 20 25 30 35 40 45 0 5 10 15 20
f = 1MHz VGS = 0 V
4
2
0 Qg , GATE CHARGE (nC)
25
30
VD S, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W) 50
Figure 8. Capacitance Characteristics.
ID , DRAIN CURRENT (A)
RDS(ON) LIMIT 10
100s 1ms 10ms 100ms 1s 10s DC
40
SINGLE PULSE RJA = 125C/W TA = 25C
30
1 VGS = 10V SINGLE PULSE o R JA = 125 C/W TA = 25 C 0.01 0.01
o
20
0.1
10
0.1
1
10
100
0 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
0.1
0.1 0.05 0.02 0.01
RJA(t) = r(t) + RJA RJA = 125 C/W P(pk) t1 t2
SINGLE PULSE
0.01
TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.001 0.0001
0.001
0.01
0.1 t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS6670S Rev E (W)
FDS6670S
Typical Characteristics
(continued)
SyncFET Schottky Body Diode Characteristics
Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS6670S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.
0.1 IDSS, REVERSE LEAKAGE CURRENT (A)
o
100 C
0.01
0.001
Current: 0.8A/div
25 C
0.0001
o
0.00001 0 10 20 30 VDS, REVERSE VOLTAGE (V)
Time: 10.0ns/div
Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature.
Figure 12. FDS6670S SyncFET body diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6670A).
Current: 0.8A/div
Time: 10.0ns/div
Figure 13. Non-SyncFET (FDS6670A) body diode reverse recovery characteristic.
FDS6670S Rev E (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4

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